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r 201401c 1/12 n ??? n-channel mosfet JCS4N65C order codes ? marking ? package halogen free ? packaging device weight jcs4n65vc-o-v-n-b jcs4n65v ipak no tube 0.35 g(typ) jcs4n65rc-o-r-n-b jcs4n65r dpak no tube 0.30 g(typ) jcs4n65rc-o-r-n-a jcs4n65r dpak no reel 0.30 g(typ) JCS4N65Cc-o-c-n-b JCS4N65C to-220c no tube 2.15 g(typ) jcs4n65fc-o-f-n-b jcs4n65f to-220mf no tube 2.20 g(typ) ? main characteristics i d 4.0 a v dss 650 v rdsonvgs=10v 2.5 qg 9nc ? z ??? z z ups ? applications z high frequency switching mode power supply z electronic ballast z ups ? z ? z c rss ( ? 12pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 12pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message ? package
r JCS4N65C 2011401c 2/12 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? value ? parameter symbol jcs4n65vc/rc JCS4N65Cc jcs4n65fc unit ???? drain-source voltage v dss 650 v 4.0 4.0* a ? drain current -continuous i d t=25 t=100 2.5 2.5* a ? ? 1 drain current - pulse note 1 i dm 16 16* a ??? gate-source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 256 mj ? ? 1 avalanche current note 1 i ar 4.0 a ?? ? 1 repetitive avalanche current note 1 e ar 11.0 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 5.5 v/ns 51 100 33 w ? power dissipation p d t c =25 -derate above 25 0.39 0.80 0.26 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r JCS4N65C 201401c 3/12 electrical characteristics ? parameter symbol tests conditions min typ max units ? off ?characteristics ??? drain-source voltage bv dss i d =250 a, v gs =0v 650 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ v ds =650v,v gs =0v, t c =25 - - 10 a ???? zero gate voltage drain current i dss v ds =520v, t c =125 - - 100 a ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.0 - 4.0 v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =2a - 2.1 2.5 ? forward transconductance g fs v ds = 40v , i d =2a note 4 - 3.7 - s ? dynamic characteristics input capacitance c iss - 690 810 pf output capacitance c oss - 62 82 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 12 17 pf
r JCS4N65C 201401c 4/12 electrical characteristics switching characteristics ?? turn-on delay time t d (on) - 30 50 ns ? turn-on rise time t r - 75 120 ns ?? turn-off delay time t d (off) - 60 150 ns ?? turn-off fall time t f v dd =300v,i d =4a,r g =25 ? note 4 5 - 55 120 ns ? total gate charge q g - 9 14 nc ?? gate-source charge q gs - 2.9 - nc ?? gate-drain charge q gd v ds =520v , i d =4a v gs =10v note 4 5 - 4.0 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain -source diode forward current i s - - 4 a maximum pulsed drain-source diode forward current i sm - - 16 a ? drain-source diode forward voltage v sd v gs =0v, i s =4.0a - - 1.4 v ?? reverse recovery time t rr - 330 - ns ? reverse recovery charge q rr v gs =0v, i s =4.0a di f /dt=100a/ s (note 4) - 2.67 - c thermal characteristic max ? parameter symbol jcs4n65vc/rcJCS4N65Cc jcs4n65fc unit ??? thermal resistance, junction to case r th(j-c) 2.50 1.25 3.79 /w ? thermal resistance, junction to ambient r th(j-a) 83 62.5 62.5 /w ?? 1 ? 2 l=25mh, i as =4.0a, v dd =50v, r g =25 ? , ? t j =25 3 i sd 4.0a,di/dt 200a/ s,vdd bv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=25mh, i as =4.0a, v dd =50v, r g =25 ? ,starting t j =25 3 i sd 4.0a,di/dt 200a/ s,vdd bv dss , starting t j =25 4 pulse test pulse width 300 s,duty cycle 2 5 essentially independent of operating temperature
r JCS4N65C 201401c 5/12 electrical characteristics (curves) on-region characteristics transfer characteristics on-resistance variation vs. drain current and gate voltage body diode forward voltage v ariation vs. source current and temperature capacitance characteristics gate charge characteristics 246810 0.1 1 10 notes 1.250 s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes 1. 250 s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 10 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250 s pulse test 2. t c =25 i d [a] v ds [v] 0123456 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 note t j =25 v gs =10v r ds (on) [ ? ] i d [a] v gs =20v 0 2 4 6 8 10 1 2 024681012141618202224262830 v ds =480v v ds =300v v ds =120v q g toltal gate charge [nc] v gs gate source voltage[v]
r JCS4N65C 201401c 6/12 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 notes 1. v g s =0v 2. i d =250 a t j [] bv dss (normalized) breakdown voltage variation vs. temperature on-resistance variation vs. temperature maximum safe operating area for jcs4n65fc maximum drain current vs. case temperature maximum safe operating area for jcs4n65 v /r/s/b/c -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =2.0a r ds (on ) (normalized) t j []
r JCS4N65C 201401c 7/12 electrical characteristics (curves) transient thermal response curve for JCS4N65Cc transient thermal response curve for jcs4n65fc transient thermal response curve for jcs4n65vc/rc
r JCS4N65C 201401c 8/12 ? package mechanical data ipak gn unit mm
r JCS4N65C 201401c 9/12 ? package mechanical data dpak gn reel unit mm
r JCS4N65C 201401c 10/12 ? package mechanical data to-220c unit mm
r JCS4N65C 201401c 11/12 ? package mechanical data to-220mf unit mm
r JCS4N65C 201401c 12/12 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533

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